Alle MOSFET. IRF740AL Datenblatt

 

IRF740AL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF740AL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 125 W

Maximale Drain-Source-Spannung (Vds): 400 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Gate-Source-Schwellspannung Vgs(th): 4 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.55 Ohm

Transistorgehäuse: TO262

Ersatz (vergleichstyp) für IRF740AL Transistor

 

IRF740AL Datasheet (PDF)

3.1. irf740as-l.pdf Size:304K _international_rectifier

IRF740AL
IRF740AL

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

3.2. irf740a.pdf Size:196K _international_rectifier

IRF740AL
IRF740AL

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

3.3. irf740as.pdf Size:135K _international_rectifier

IRF740AL
IRF740AL

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Volt

3.4. irf740a.pdf Size:937K _samsung

IRF740AL
IRF740AL

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

3.5. irf740a sihf740a.pdf Size:205K _vishay

IRF740AL
IRF740AL

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Singl

Anderen MOSFET... IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF520 , IRF740AS , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 , IRF742 .

 


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