Alle MOSFET. IRFIZ24E Datenblatt

 

IRFIZ24E MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRFIZ24E

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 29 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 14 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 20 nC

Ausgangswiderstand RDS(on): 0.071 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für IRFIZ24E Transistor

 

IRFIZ24E Datasheet (PDF)

1.1. irfiz24e.pdf Size:114K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.071? Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per silico

1.2. irfiz24epbf.pdf Size:225K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 95594 IRFIZ24EPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 60V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.071Ω l Lead-Free G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely

 3.1. irfiz24g irfiz24gpbf.pdf Size:1555K _international_rectifier

IRFIZ24E
IRFIZ24E

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 • 175 °C Operating Temperature Qgd (nC) 11 • Dynamic dV/dt Rating • Low Ther

3.2. irfiz24v.pdf Size:83K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 94102 IRFIZ24V Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 0.060? Fully Avalanche Rated G Optimized for SMPS Applications Description ID = 14A S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 3.3. irfiz24g.pdf Size:919K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 94875 IRFIZ24GPbF Lead-Free 12/9/03 Document Number: 91187 www.vishay.com 1 IRFIZ24GPbF Document Number: 91187 www.vishay.com 2 IRFIZ24GPbF Document Number: 91187 www.vishay.com 3 IRFIZ24GPbF Document Number: 91187 www.vishay.com 4 IRFIZ24GPbF Document Number: 91187 www.vishay.com 5 IRFIZ24GPbF Document Number: 91187 www.vishay.com 6 IRFIZ24GPbF TO-220 Full-Pak P

3.4. irfiz24n.pdf Size:105K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 14A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 3.5. irfiz24npbf.pdf Size:213K _international_rectifier

IRFIZ24E
IRFIZ24E

PD - 94808 IRFIZ24NPbF HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.07Ω Fully Avalanche Rated G Lead-Free Description ID = 14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

3.6. irfiz24g sihfiz24g.pdf Size:1554K _vishay

IRFIZ24E
IRFIZ24E

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Thermal Resistance C

Anderen MOSFET... IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRF1404 , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRFIZ44N , IRFIZ46N , IRFIZ48N .

 

 
Back to Top

 


IRFIZ24E
  IRFIZ24E
  IRFIZ24E
  IRFIZ24E
 

social 

Liste

Letztes Update

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top