Alle MOSFET. IRLI540GPBF Datenblatt

 

IRLI540GPBF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRLI540GPBF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 48 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 17 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Anstiegszeit (tr): 170 nS

Drain-Kapazität (Cd): 560 pF

Ausgangswiderstand RDS(on): 0.077 Ohm

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für IRLI540GPBF Transistor

 

IRLI540GPBF Datasheet (PDF)

1.1. irli540g irli540gpbf.pdf Size:1502K _upd

IRLI540GPBF
IRLI540GPBF

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 • Logic-Level Gate Drive Qgd (nC) 27 • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching Configur

2.1. irli540g.pdf Size:157K _international_rectifier

IRLI540GPBF
IRLI540GPBF

Document Number: 90399 www.vishay.com 1391 Document Number: 90399 www.vishay.com 1392 Document Number: 90399 www.vishay.com 1393 Document Number: 90399 www.vishay.com 1394 Document Number: 90399 www.vishay.com 1395 Document Number: 90399 www.vishay.com 1396 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

 3.1. irli540npbf.pdf Size:258K _upd

IRLI540GPBF
IRLI540GPBF

PD -95454 IRLI540NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.044Ω l Fully Avalanche Rated G l Lead-Free ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

3.2. irli540n.pdf Size:122K _international_rectifier

IRLI540GPBF
IRLI540GPBF

PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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