Alle MOSFET. IRFP350 Datenblatt

 

IRFP350 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRFP350

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 180 W

Maximale Drain-Source-Spannung (Vds): 400 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 16 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 150 nC

Drain-Kapazität (Cd): 2900 pF

Ausgangswiderstand RDS(on): 0.3 Ohm

Transistorgehäuse: TO218

Ersatz (vergleichstyp) für IRFP350 Transistor

 

IRFP350 Datasheet (PDF)

1.1. irfp350r.pdf Size:62K _upd-mosfet

IRFP350
IRFP350

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

1.2. irfp350cf.pdf Size:167K _upd-mosfet

IRFP350



 1.3. irfp350pbf.pdf Size:1571K _upd-mosfet

IRFP350
IRFP350

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.30 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 • Fast Switching Qgs (nC) 23 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead

1.4. irfp350lcpbf.pdf Size:1495K _upd-mosfet

IRFP350
IRFP350

PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor

 1.5. irfp350fi.pdf Size:407K _st2

IRFP350
IRFP350

1.6. irfp350a.pdf Size:232K _fairchild_semi

IRFP350
IRFP350

IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS D

1.7. irfp350lcpbf.pdf Size:1471K _international_rectifier

IRFP350
IRFP350

PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 IRFP350LCPbF Document Number: 91224 www.vishay.com 2 IRFP350LCPbF Document Number: 91224 www.vishay.com 3 IRFP350LCPbF Document Number: 91224 www.vishay.com 4 IRFP350LCPbF Document Number: 91224 www.vishay.com 5 IRFP350LCPbF Document Number: 91224 www.vishay.com 6 IRFP350LCPbF Document N

1.8. irfp350lc.pdf Size:160K _international_rectifier

IRFP350
IRFP350

PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.9. irfp350.pdf Size:872K _international_rectifier

IRFP350
IRFP350

PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number: 91225 www.vishay.com 1 IRFP350PbF Document Number: 91225 www.vishay.com 2 IRFP350PbF Document Number: 91225 www.vishay.com 3 IRFP350PbF Document Number: 91225 www.vishay.com 4 IRFP350PbF Document Number: 91225 www.vishay.com 5 IRFP350PbF Document Number: 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Outline

1.10. irfp350-353.pdf Size:220K _samsung

IRFP350
IRFP350

 This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

1.11. irfp350a.pdf Size:985K _samsung

IRFP350
IRFP350

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.12. irfp350 sihfp350.pdf Size:1574K _vishay

IRFP350
IRFP350

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

1.13. irfp350lc sihfp350lc.pdf Size:1303K _vishay

IRFP350
IRFP350

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) (?)VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Avalanche Rated Con

Anderen MOSFET... IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP064N , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 .

 
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