Alle MOSFET. SI1406DH Datenblatt

 

SI1406DH MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: SI1406DH

Markierungscode: AB*

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 8 V

Maximaler Drainstrom (Id): 3.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 1.2 V

Anstiegszeit (tr): 47 nS

Ausgangswiderstand RDS(on): 0.065 Ohm

Transistorgehäuse: SOT-363

Ersatz (vergleichstyp) für SI1406DH Transistor

 

SI1406DH Datasheet (PDF)

1.1. si1406dh.pdf Size:229K _vishay

SI1406DH
SI1406DH

Si1406DH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.065 at VGS = 4.5 V 3.9 • TrenchFET® Power MOSFETs: 1.8 V Rated 0.075 at VGS = 2.5 V 20 3.6 • Thermally Enhanced SC-70 Package 0.096 at VGS = 1.8 V 3.2 • Compliant to RoHS Directive 2002/95/EC APPLICAT

5.1. si1404bdh.pdf Size:105K _vishay

SI1406DH
SI1406DH

Si1404BDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)a Qg (Typ.) Definition 0.238 at VGS = 4.5 V 1.9 • TrenchFET® Power MOSFET 30 1.1 nC 0.380 at VGS = 2.5 V 1.51 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SC-70 (6-LEADS) • Load Switch f

5.2. si1405dl.pdf Size:245K _vishay

SI1406DH
SI1406DH

Si1405DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.125 at VGS = - 4.5 V ± 1.8 • TrenchFET® Power MOSFET: 1.8 V Rated - 8 0.160 at VGS = - 2.5 V ± 1.6 • Compliant to RoHS Directive 2002/95/EC 0.210 at VGS = - 1.8 V ± 1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D Mar

 5.3. si1402dh.pdf Size:94K _vishay

SI1406DH
SI1406DH

Si1402DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.077 at VGS = 4.5 V 3.4 • TrenchFET® Power MOSFET: 2.5 V Rated 30 0.120 at VGS = 2.5 V 2.5 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications SOT-363 SC-70 (6-LEA

5.4. si1400dl.pdf Size:91K _vishay

SI1406DH
SI1406DH

Si1400DL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.150 at VGS = 4.5 V 1.7 • TrenchFET® Power MOSFET: 2.5 V Rated - 20 0.235 at VGS = 2.5 V 1.3 • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code ND XX 5 D 2 D Lot Traceab

 5.5. si1407dl.pdf Size:75K _vishay

SI1406DH
SI1406DH

Si1407DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) rDS(on) (?) ID (A) Pb-free 1.8 V Rated Available 0.130 at VGS = - 4.5 V - 1.8 RoHS* - 12 0.170 at VGS = - 2.5 V - 1.5 COMPLIANT 0.225 at VGS = - 1.8 V - 1.3 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OC XX 5 D 2 D Lot Traceability and Date Code Part # C

5.6. si1403cdl.pdf Size:235K _vishay

SI1406DH
SI1406DH

Si1403CDL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)c Qg (Typ.) Definition 0.140 at VGS = - 4.5 V - 2.1 • TrenchFET® Power MOSFET - 20 0.160 at VGS = - 3.6 V - 1.9 4 nC • 100 % Rg Tested 0.222 at VGS = - 2.5 V - 1.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS

5.7. si1403bdl.pdf Size:249K _vishay

SI1406DH
SI1406DH

Si1403BDL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V - 1.5 • TrenchFET® Power MOSFET 0.175 at VGS = - 3.6 V - 1.4 2.9 - 20 • Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 2.5 V - 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D

5.8. si1403dl.pdf Size:409K _vishay

SI1406DH
SI1406DH

Si1403DL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) (?) ID (A) Pb-free Available 0.180 at VGS = - 4.5 V 1.5 RoHS* - 25 0.200 at VGS = - 3.6 V 1.4 COMPLIANT 0.265 at VGS = - 2.5 V 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OA XX 5 D 2 D Lot Traceability and Date Code G 3 4 S Part

5.9. si1405bdh.pdf Size:238K _vishay

SI1406DH
SI1406DH

Si1405BDH Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)c Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 1.6 • TrenchFET® Power MOSFET - 8 0.160 at VGS = - 2.5 V - 1.6 3.67 nC • Compliant to RoHS Directive 2002/95/EC 0.210 at VGS = - 1.8 V - 1.6 APPLICATIONS • Load Switch for

5.10. si1404bd.pdf Size:105K _vishay

SI1406DH
SI1406DH

Si1404BDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A)a Qg (Typ.) Definition 0.238 at VGS = 4.5 V 1.9 TrenchFET Power MOSFET 30 1.1 nC 0.380 at VGS = 2.5 V 1.51 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SC-70 (6-LEADS) Load Switch for Portable Dev

5.11. si1401edh.pdf Size:259K _vishay

SI1406DH
SI1406DH

New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 • TrenchFET® Power MOSFET 0.046 at VGS = - 2.5 V - 4 • Typical ESD Performance 1500 V - 12 14.1 nC • 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 • Compl

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