Alle MOSFET. IRFS530 Datenblatt

 

IRFS530 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRFS530

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 35 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximaler Drainstrom (Id): 14 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 0.16 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für IRFS530 Transistor

 

IRFS530 Datasheet (PDF)

1.1. irfs530a.pdf Size:509K _samsung

IRFS530
IRFS530

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10.7 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

5.1. irfs59n10d.pdf Size:138K _international_rectifier

IRFS530
IRFS530

PD - 93890 IRFB59N10D IRFS59N10D SMPS MOSFET IRFSL59N10D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.025? 59A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Vol

5.2. irfs52n15d.pdf Size:134K _international_rectifier

IRFS530
IRFS530

PD - 94357 IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032? 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220

5.3. irfs520 irfs521.pdf Size:277K _samsung

IRFS530
IRFS530



5.4. irfszxx irfs5xx irfs6xx irfs7xx.pdf Size:28K _samsung

IRFS530



5.5. irfs520a.pdf Size:504K _samsung

IRFS530
IRFS530

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.2 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

5.6. irfs550a.pdf Size:510K _samsung

IRFS530
IRFS530

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

5.7. irfs540a.pdf Size:507K _samsung

IRFS530
IRFS530

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Anderen MOSFET... IRFS452 , IRFS453 , IRFS510A , IRFS520 , IRFS520A , IRFS521 , IRFS522 , IRFS523 , IRFP064N , IRFS530A , IRFS531 , IRFS532 , IRFS533 , IRFS540 , IRFS540A , IRFS541 , IRFS542 .

 


IRFS530
  IRFS530
  IRFS530
  IRFS530
 
IRFS530
  IRFS530
  IRFS530
 

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