Alle MOSFET. FQD4N25TM Datenblatt

 

FQD4N25TM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD4N25TM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 37 W

Maximale Drain-Source-Spannung (Vds): 250 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 4.3 nC

Anstiegszeit (tr): 45 nS

Drain-Kapazität (Cd): 35 pF

Ausgangswiderstand RDS(on): 1.75 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD4N25TM Transistor

 

FQD4N25TM Datasheet (PDF)

1.1. fqd4n25tf fqd4n25tm.pdf Size:717K _fairchild_semi

FQD4N25TM
FQD4N25TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

3.1. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQD4N25TM
FQD4N25TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been espe

 4.1. fqd4n20 fqu4n20.pdf Size:819K _fairchild_semi

FQD4N25TM
FQD4N25TM

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to

4.2. fqd4n20ltm.pdf Size:521K _fairchild_semi

FQD4N25TM
FQD4N25TM

December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.2A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced

 4.3. fqd4n20tf.pdf Size:819K _fairchild_semi

FQD4N25TM
FQD4N25TM

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especial

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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