Alle MOSFET. FQD4P40TF Datenblatt

 

FQD4P40TF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD4P40TF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 50 W

Maximale Drain-Source-Spannung (Vds): 400 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 2.7 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 18 nC

Anstiegszeit (tr): 55 nS

Drain-Kapazität (Cd): 80 pF

Ausgangswiderstand RDS(on): 3.1 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD4P40TF Transistor

 

FQD4P40TF Datasheet (PDF)

1.1. fqd4p40tf fqd4p40tm.pdf Size:759K _fairchild_semi

FQD4P40TF
FQD4P40TF

January 2009 QFET® FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especia

3.1. fqd4p40.pdf Size:780K _fairchild_semi

FQD4P40TF
FQD4P40TF

November 2013 FQD4P40 P-Channel QFET® MOSFET -400 V, -2.7 A, 3.1 Ω Description Features • These P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, ID = -1.35 A transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 18 nC) technology has been especially t

 5.1. fqd4p25 fqu4p25.pdf Size:585K _fairchild_semi

FQD4P40TF
FQD4P40TF

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is espe

5.2. fqd4p25tm ws.pdf Size:980K _fairchild_semi

FQD4P40TF
FQD4P40TF

November 2013 FQD4P25TM_WS P-Channel QFET® MOSFET -250 V, -3.1 A, 2.1 Ω Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 10 nC) technology has been especi

 5.3. fqd4p25.pdf Size:591K _fairchild_semi

FQD4P40TF
FQD4P40TF

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 10.3 pF) This advanced techn

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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