Alle MOSFET. FQD5N15TF Datenblatt

 

FQD5N15TF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD5N15TF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 30 W

Maximale Drain-Source-Spannung (Vds): 150 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 4.3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 5.4 nC

Anstiegszeit (tr): 45 nS

Drain-Kapazität (Cd): 40 pF

Ausgangswiderstand RDS(on): 0.8 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD5N15TF Transistor

 

FQD5N15TF Datasheet (PDF)

1.1. fqd5n15tf fqd5n15tm.pdf Size:808K _fairchild_semi

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October 2008 QFET® 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.3A, 150V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especial

3.1. fqd5n15.pdf Size:840K _fairchild_semi

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November 2013 FQD5N15 N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tai

 5.1. fqd5n50tf.pdf Size:768K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

5.2. fqd5n50.pdf Size:548K _fairchild_semi

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TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an

 5.3. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

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October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

5.4. fqd5n60c fqu5n60c.pdf Size:636K _fairchild_semi

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October 2008 QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 5.5. fqd5n40tf fqd5n40tm.pdf Size:730K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology

5.6. fqd5n30tf fqd5n30tm.pdf Size:752K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology h

5.7. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been espec

5.8. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

5.9. fqd5n20tf.pdf Size:690K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

5.10. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

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October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

5.11. fqd5n50ctf fqd5n50ctm.pdf Size:664K _fairchild_semi

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October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

5.12. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been espe

5.13. fqd5n60ctf fqd5n60ctm.pdf Size:636K _fairchild_semi

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October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia

5.14. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

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October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

5.15. fqd5n50c.pdf Size:664K _fairchild_semi

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October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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