Alle MOSFET. FQD5N20LTM Datenblatt

 

FQD5N20LTM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD5N20LTM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 37 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 3.8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Gate-Ladung (Qg): 4.8 nC

Anstiegszeit (tr): 90 nS

Drain-Kapazität (Cd): 40 pF

Ausgangswiderstand RDS(on): 1.2 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD5N20LTM Transistor

 

FQD5N20LTM Datasheet (PDF)

1.1. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

FQD5N20LTM
FQD5N20LTM

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

2.1. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N20LTM
FQD5N20LTM

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

 3.1. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N20LTM
FQD5N20LTM

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

3.2. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N20LTM
FQD5N20LTM

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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