Alle MOSFET. FQD5N50TF Datenblatt

 

FQD5N50TF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD5N50TF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 50 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 3.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 13 nC

Anstiegszeit (tr): 55 nS

Drain-Kapazität (Cd): 75 pF

Ausgangswiderstand RDS(on): 1.8 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD5N50TF Transistor

 

FQD5N50TF Datasheet (PDF)

1.1. fqd5n50tf.pdf Size:768K _fairchild_semi

FQD5N50TF
FQD5N50TF

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

3.1. fqd5n50.pdf Size:548K _fairchild_semi

FQD5N50TF
FQD5N50TF

TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an

3.2. fqd5n50ctf fqd5n50ctm.pdf Size:664K _fairchild_semi

FQD5N50TF
FQD5N50TF

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

 3.3. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

FQD5N50TF
FQD5N50TF

October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

3.4. fqd5n50c.pdf Size:664K _fairchild_semi

FQD5N50TF
FQD5N50TF

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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