Alle MOSFET. FQD6N40TM Datenblatt

 

FQD6N40TM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD6N40TM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 50 W

Maximale Drain-Source-Spannung (Vds): 400 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4.2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 13 nC

Anstiegszeit (tr): 65 nS

Drain-Kapazität (Cd): 80 pF

Ausgangswiderstand RDS(on): 1.15 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD6N40TM Transistor

 

FQD6N40TM Datasheet (PDF)

1.1. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

FQD6N40TM
FQD6N40TM

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technolog

3.1. fqd6n40ctf fqd6n40ctm.pdf Size:654K _fairchild_semi

FQD6N40TM
FQD6N40TM

October 2008 QFET® FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especiall

3.2. fqd6n40c fqu6n40c.pdf Size:654K _fairchild_semi

FQD6N40TM
FQD6N40TM

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

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