Alle MOSFET. FQD6N60CTM Datenblatt

 

FQD6N60CTM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD6N60CTM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 80 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 16 nC

Anstiegszeit (tr): 45 nS

Drain-Kapazität (Cd): 65 pF

Ausgangswiderstand RDS(on): 2 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD6N60CTM Transistor

 

FQD6N60CTM Datasheet (PDF)

1.1. fqd6n60ctm.pdf Size:679K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

2.1. fqd6n60c.pdf Size:678K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistanc

 5.1. fqd6n50ctf fqd6n50ctm.pdf Size:757K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET® FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC) planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especially t

5.2. fqd6n40ctf fqd6n40ctm.pdf Size:654K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET® FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especiall

 5.3. fqd6n25tf fqd6n25tm.pdf Size:798K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET® FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especia

5.4. fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially tailored to

 5.5. fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t

5.6. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technolog

5.7. fqd6n40c fqu6n40c.pdf Size:654K _fairchild_semi

FQD6N60CTM
FQD6N60CTM

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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