Alle MOSFET. FQD7N20LTM Datenblatt

 

FQD7N20LTM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQD7N20LTM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 45 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 5.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Gate-Ladung (Qg): 6.8 nC

Anstiegszeit (tr): 125 nS

Drain-Kapazität (Cd): 55 pF

Ausgangswiderstand RDS(on): 0.75 Ohm

Transistorgehäuse: D-PAK

Ersatz (vergleichstyp) für FQD7N20LTM Transistor

 

FQD7N20LTM Datasheet (PDF)

1.1. fqd7n20ltf fqd7n20ltm.pdf Size:622K _fairchild_semi

FQD7N20LTM
FQD7N20LTM

October 2008 QFET® FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology is especi

2.1. fqd7n20l fqu7n20l.pdf Size:569K _fairchild_semi

FQD7N20LTM
FQD7N20LTM

December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced

 3.1. fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi

FQD7N20LTM
FQD7N20LTM

October 2008 QFET FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored t

3.2. fqd7n20tf fqd7n20tm.pdf Size:802K _fairchild_semi

FQD7N20LTM
FQD7N20LTM

October 2008 QFET® FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especia

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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