Alle MOSFET. FQI10N20CTU Datenblatt

 

FQI10N20CTU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI10N20CTU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 72 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 9.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 20 nC

Anstiegszeit (tr): 92 nS

Drain-Kapazität (Cd): 97 pF

Ausgangswiderstand RDS(on): 0.36 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI10N20CTU Transistor

 

FQI10N20CTU Datasheet (PDF)

1.1. fqi10n20ctu.pdf Size:608K _fairchild_semi

FQI10N20CTU
FQI10N20CTU

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore

4.1. fqi10n60ctu.pdf Size:614K _fairchild_semi

FQI10N20CTU
FQI10N20CTU

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 44 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailore

 

Anderen MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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