Alle MOSFET. FQI13N06TU Datenblatt

 

FQI13N06TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI13N06TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 45 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 13 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 5.8 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 90 pF

Ausgangswiderstand RDS(on): 0.135 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI13N06TU Transistor

 

FQI13N06TU Datasheet (PDF)

1.1. fqi13n06tu.pdf Size:673K _fairchild_semi

FQI13N06TU
FQI13N06TU

May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially

2.1. fqi13n06ltu.pdf Size:668K _fairchild_semi

FQI13N06TU
FQI13N06TU

May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

 4.1. fqb13n50c fqi13n50c.pdf Size:967K _fairchild_semi

FQI13N06TU
FQI13N06TU

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

4.2. fqi13n50ctu.pdf Size:967K _fairchild_semi

FQI13N06TU
FQI13N06TU

October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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