Alle MOSFET. FQI13N50CTU Datenblatt

 

FQI13N50CTU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI13N50CTU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 195 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 13 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 43 nC

Anstiegszeit (tr): 100 nS

Drain-Kapazität (Cd): 180 pF

Ausgangswiderstand RDS(on): 0.48 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI13N50CTU Transistor

 

FQI13N50CTU Datasheet (PDF)

1.1. fqb13n50c fqi13n50c.pdf Size:967K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

1.2. fqi13n50ctu.pdf Size:967K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

 4.1. fqi13n06tu.pdf Size:673K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially

4.2. fqi13n06ltu.pdf Size:668K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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