Alle MOSFET. FQI19N20TU Datenblatt

 

FQI19N20TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI19N20TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 140 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 19.4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 31 nC

Anstiegszeit (tr): 190 nS

Drain-Kapazität (Cd): 220 pF

Ausgangswiderstand RDS(on): 0.15 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI19N20TU Transistor

 

FQI19N20TU Datasheet (PDF)

1.1. fqi19n20tu.pdf Size:831K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET® FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 19.4A, 200V, RDS(on) = 0.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been espec

2.1. fqb19n20l fqi19n20l.pdf Size:839K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tai

2.2. fqb19n20 fqi19n20.pdf Size:831K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored

 2.3. fqb19n20c fqi19n20c.pdf Size:1167K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored

2.4. fqi19n20ctu.pdf Size:1167K _fairchild_semi

FQI19N20TU
FQI19N20TU

October 2008 QFET® FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been espec

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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