Alle MOSFET. FQI1P50TU Datenblatt

 

FQI1P50TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI1P50TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 63 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 1.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 11 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 40 pF

Ausgangswiderstand RDS(on): 10.5 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI1P50TU Transistor

 

FQI1P50TU Datasheet (PDF)

1.1. fqi1p50tu.pdf Size:934K _fairchild_semi

FQI1P50TU
FQI1P50TU

October 2008 QFET® FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially t

3.1. fqb1p50 fqi1p50.pdf Size:934K _fairchild_semi

FQI1P50TU
FQI1P50TU

October 2008 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to min

 

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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