Alle MOSFET. FQI27P06TU Datenblatt

 

FQI27P06TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI27P06TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 120 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 27 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 33 nC

Anstiegszeit (tr): 185 nS

Drain-Kapazität (Cd): 510 pF

Ausgangswiderstand RDS(on): 0.07 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI27P06TU Transistor

 

FQI27P06TU Datasheet (PDF)

1.1. fqi27p06tu.pdf Size:1071K _fairchild_semi

FQI27P06TU
FQI27P06TU

October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especia

2.1. fqb27p06 fqi27p06.pdf Size:1119K _fairchild_semi

FQI27P06TU
FQI27P06TU

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored t

 5.1. fqi27n25tu.pdf Size:814K _fairchild_semi

FQI27P06TU
FQI27P06TU

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.5A, 250V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology

5.2. fqi27n25 fqb27n25.pdf Size:814K _fairchild_semi

FQI27P06TU
FQI27P06TU

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been esp

 5.3. fqi27n25tu f085.pdf Size:1099K _fairchild_semi

FQI27P06TU
FQI27P06TU

April 2010 tm FQI27N25TU_F085 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fas

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top