Alle MOSFET. FQI2N30TU Datenblatt

 

FQI2N30TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI2N30TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 40 W

Maximale Drain-Source-Spannung (Vds): 300 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 2.1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 3.7 nC

Anstiegszeit (tr): 26 nS

Drain-Kapazität (Cd): 25 pF

Ausgangswiderstand RDS(on): 3.7 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI2N30TU Transistor

 

FQI2N30TU Datasheet (PDF)

1.1. fqi2n30tu.pdf Size:741K _fairchild_semi

FQI2N30TU
FQI2N30TU

May 2000 TM QFET QFET QFET QFET FQB2N30 / FQI2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology h

5.1. fqi2na90tu.pdf Size:705K _fairchild_semi

FQI2N30TU
FQI2N30TU

September 2000 TM QFET QFET QFET QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced tech

5.2. fqi2n90tu.pdf Size:754K _fairchild_semi

FQI2N30TU
FQI2N30TU

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technolo

 5.3. fqi2n80tu.pdf Size:321K _fairchild_semi

FQI2N30TU

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration: Figure 1.0 Packaging Description: 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

Anderen MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
Back to Top