Alle MOSFET. FQI3N25TU Datenblatt

 

FQI3N25TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI3N25TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 45 W

Maximale Drain-Source-Spannung (Vds): 250 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 2.8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 4 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 30 pF

Ausgangswiderstand RDS(on): 2.2 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI3N25TU Transistor

 

FQI3N25TU Datasheet (PDF)

1.1. fqi3n25tu.pdf Size:621K _fairchild_semi

FQI3N25TU
FQI3N25TU

November 2000 TM QFET QFET QFET QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.7 pF) This advanced technolo

5.1. fqb3n90 fqi3n90.pdf Size:697K _fairchild_semi

FQI3N25TU
FQI3N25TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has bee

5.2. fqi3n30tu.pdf Size:718K _fairchild_semi

FQI3N25TU
FQI3N25TU

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

 5.3. fqi3n40tu.pdf Size:730K _fairchild_semi

FQI3N25TU
FQI3N25TU

April 2000 TM QFET QFET QFET QFET FQB3N40 / FQI3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technolog

5.4. fqi3n90tu.pdf Size:695K _fairchild_semi

FQI3N25TU
FQI3N25TU

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced techn

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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