Alle MOSFET. FQI47P06TU Datenblatt

 

FQI47P06TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI47P06TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 160 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 47 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 84 nC

Anstiegszeit (tr): 450 nS

Drain-Kapazität (Cd): 1300 pF

Ausgangswiderstand RDS(on): 0.026 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI47P06TU Transistor

 

FQI47P06TU Datasheet (PDF)

1.1. fqi47p06tu.pdf Size:1192K _fairchild_semi

FQI47P06TU
FQI47P06TU

October 2008 QFET® FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especi

2.1. fqb47p06 fqi47p06.pdf Size:1207K _fairchild_semi

FQI47P06TU
FQI47P06TU

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored

 

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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