Alle MOSFET. FQI50N06LTU Datenblatt

 

FQI50N06LTU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI50N06LTU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 121 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 52.4 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2.5 V

Gate-Ladung (Qg): 24.5 nC

Anstiegszeit (tr): 380 nS

Drain-Kapazität (Cd): 445 pF

Ausgangswiderstand RDS(on): 0.021 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI50N06LTU Transistor

 

FQI50N06LTU Datasheet (PDF)

1.1. fqb50n06l fqi50n06l.pdf Size:1052K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially t

1.2. fqi50n06ltu.pdf Size:1022K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET® FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has bee

 2.1. fqi50n06tu.pdf Size:1015K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially

2.2. fqb50n06 fqi50n06.pdf Size:1038K _fairchild_semi

FQI50N06LTU
FQI50N06LTU

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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