Alle MOSFET. FQI5N80TU Datenblatt

 

FQI5N80TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI5N80TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 140 W

Maximale Drain-Source-Spannung (Vds): 800 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4.8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 25 nC

Anstiegszeit (tr): 60 nS

Drain-Kapazität (Cd): 95 pF

Ausgangswiderstand RDS(on): 2.6 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI5N80TU Transistor

 

FQI5N80TU Datasheet (PDF)

1.1. fqi5n80tu.pdf Size:670K _fairchild_semi

FQI5N80TU
FQI5N80TU

September 2000 TM QFET FQB5N80 / FQI5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especia

5.1. fqi5n15tu.pdf Size:760K _fairchild_semi

FQI5N80TU
FQI5N80TU

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.4A, 150V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology h

5.2. fqi5n30tu.pdf Size:765K _fairchild_semi

FQI5N80TU
FQI5N80TU

May 2000 TM QFET QFET QFET QFET FQB5N30 / FQI5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology h

 5.3. fqi5n20tu.pdf Size:700K _fairchild_semi

FQI5N80TU
FQI5N80TU

April 2000 TM QFET QFET QFET QFET FQB5N20 / FQI5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

5.4. fqi5n60ctu.pdf Size:655K _fairchild_semi

FQI5N80TU
FQI5N80TU

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored

 5.5. fqb5n90 fqi5n90.pdf Size:1072K _fairchild_semi

FQI5N80TU
FQI5N80TU

October 2008 QFET FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especially tailored to

5.6. fqb5n60c fqi5n60c.pdf Size:655K _fairchild_semi

FQI5N80TU
FQI5N80TU

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast sw

5.7. fqi5n20ltu.pdf Size:538K _fairchild_semi

FQI5N80TU
FQI5N80TU

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced

5.8. fqi5n50ctu.pdf Size:945K _fairchild_semi

FQI5N80TU
FQI5N80TU

October 2008 QFET® FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tai

5.9. fqb5n50c fqi5n50c.pdf Size:945K _fairchild_semi

FQI5N80TU
FQI5N80TU

October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fa

5.10. fqb5n60 fqi5n60.pdf Size:553K _fairchild_semi

FQI5N80TU
FQI5N80TU

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been espec

5.11. fqi5n40tu.pdf Size:711K _fairchild_semi

FQI5N80TU
FQI5N80TU

April 2000 TM QFET QFET QFET QFET FQB5N40 / FQI5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology

5.12. fqb5n20l fqi5n20l.pdf Size:539K _fairchild_semi

FQI5N80TU
FQI5N80TU

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is

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