Alle MOSFET. FQI5P10TU Datenblatt

 

FQI5P10TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI5P10TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 40 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4.5 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 6.3 nC

Anstiegszeit (tr): 70 nS

Drain-Kapazität (Cd): 70 pF

Ausgangswiderstand RDS(on): 1.05 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI5P10TU Transistor

 

FQI5P10TU Datasheet (PDF)

1.1. fqi5p10tu.pdf Size:653K _fairchild_semi

FQI5P10TU
FQI5P10TU

TM QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -4.5A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailore

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