Alle MOSFET. FQI8P10TU Datenblatt

 

FQI8P10TU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI8P10TU

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 65 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 8 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 12 nC

Anstiegszeit (tr): 110 nS

Drain-Kapazität (Cd): 120 pF

Ausgangswiderstand RDS(on): 0.53 Ohm

Transistorgehäuse: I2-PAK

Ersatz (vergleichstyp) für FQI8P10TU Transistor

 

FQI8P10TU Datasheet (PDF)

1.1. fqi8p10tu.pdf Size:665K _fairchild_semi

FQI8P10TU
FQI8P10TU

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

3.1. fqb8p10 fqi8p10.pdf Size:667K _fairchild_semi

FQI8P10TU
FQI8P10TU

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast s

 

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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