Alle MOSFET. FQN1N50CBU Datenblatt

 

FQN1N50CBU MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQN1N50CBU

Markierungscode: 1N50C

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.89 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 0.38 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 4.9 nC

Anstiegszeit (tr): 10 nS

Drain-Kapazität (Cd): 28 pF

Ausgangswiderstand RDS(on): 6 Ohm

Transistorgehäuse: TO-92

Ersatz (vergleichstyp) für FQN1N50CBU Transistor

 

FQN1N50CBU Datasheet (PDF)

1.1. fqn1n50cbu fqn1n50cta.pdf Size:1065K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

January 2006 ® QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS(on) = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typica

2.1. fqn1n50c.pdf Size:1068K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 4.1 pF) min

 5.1. fqn1n60c.pdf Size:683K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimize on-state re

5.2. fqn1n60cbu fqn1n60cta.pdf Size:682K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

® QFET FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 3.5 pF) minimi

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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