Alle MOSFET. FQNL2N50BTA Datenblatt

 

FQNL2N50BTA MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQNL2N50BTA

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1.5 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 0.35 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 3.7 V

Gate-Ladung (Qg): 6 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 30 pF

Ausgangswiderstand RDS(on): 5.3 Ohm

Transistorgehäuse: TO-92L

Ersatz (vergleichstyp) für FQNL2N50BTA Transistor

 

FQNL2N50BTA Datasheet (PDF)

1.1. fqnl2n50b.pdf Size:598K _fairchild_semi

FQNL2N50BTA
FQNL2N50BTA

March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.35A, 500V, RDS(on) = 5.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has been especially tailored to Fas

1.2. fqnl2n50bbu fqnl2n50bta.pdf Size:596K _fairchild_semi

FQNL2N50BTA
FQNL2N50BTA

March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo

 

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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