Alle MOSFET. FQP11N50CF Datenblatt

 

FQP11N50CF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP11N50CF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 195 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 11 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 43 nC

Anstiegszeit (tr): 70 nS

Drain-Kapazität (Cd): 185 pF

Ausgangswiderstand RDS(on): 0.55 Ohm

Transistorgehäuse: TO-220

Ersatz (vergleichstyp) für FQP11N50CF Transistor

 

FQP11N50CF Datasheet (PDF)

1.1. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

FQP11N50CF
FQP11N50CF

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

1.2. fqp11n50cf.pdf Size:1291K _fairchild_semi

FQP11N50CF
FQP11N50CF

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tai

 4.1. fqp11n40.pdf Size:699K _fairchild_semi

FQP11N50CF
FQP11N50CF

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has bee

4.2. fqp11n40c fqpf11n40c.pdf Size:1216K _fairchild_semi

FQP11N50CF
FQP11N50CF

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially tailored to m

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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