Alle MOSFET. FQP13N06 Datenblatt

 

FQP13N06 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP13N06

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 45 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 13 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 5.8 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 90 pF

Ausgangswiderstand RDS(on): 0.135 Ohm

Transistorgehäuse: TO-220

Ersatz (vergleichstyp) für FQP13N06 Transistor

 

FQP13N06 Datasheet (PDF)

1.1. fqp13n06l.pdf Size:659K _fairchild_semi

FQP13N06
FQP13N06

May 2001 TM QFET FQP13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to F

1.2. fqp13n06.pdf Size:663K _fairchild_semi

FQP13N06
FQP13N06

May 2001 TM QFET FQP13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to

 4.1. fqp13n10l.pdf Size:554K _fairchild_semi

FQP13N06
FQP13N06

December 2000 TM QFET QFET QFET QFET FQP13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especial

4.2. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi

FQP13N06
FQP13N06

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mi

 4.3. fqp13n10.pdf Size:618K _fairchild_semi

FQP13N06
FQP13N06

January 2001 TM QFET QFET QFET QFET FQP13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially

4.4. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi

FQP13N06
FQP13N06

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast swi

 4.5. fqp13n50c.pdf Size:1062K _fairchild_semi

FQP13N06
FQP13N06

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

4.6. fqp13n50 fqpf13n50.pdf Size:883K _fairchild_semi

FQP13N06
FQP13N06

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast sw

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