Alle MOSFET. FQP18N20V2 Datenblatt

 

FQP18N20V2 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP18N20V2

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 123 W

Maximale Drain-Source-Spannung (Vds): 200 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 18 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 5 V

Gate-Ladung (Qg): 20 nC

Anstiegszeit (tr): 133 nS

Drain-Kapazität (Cd): 200 pF

Ausgangswiderstand RDS(on): 0.14 Ohm

Transistorgehäuse: TO-220

Ersatz (vergleichstyp) für FQP18N20V2 Transistor

 

FQP18N20V2 Datasheet (PDF)

1.1. fqp18n20v2.pdf Size:793K _fairchild_semi

FQP18N20V2
FQP18N20V2

TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailore

4.1. fqp18n50v2.pdf Size:836K _fairchild_semi

FQP18N20V2
FQP18N20V2

TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailor

 

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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