Alle MOSFET. 2SJ506 Datenblatt

 

2SJ506 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 2SJ506

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 20 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 65 nS

Drain-Kapazität (Cd): 440 pF

Ausgangswiderstand RDS(on): 0.065 Ohm

Transistorgehäuse: DPAK

Ersatz (vergleichstyp) für 2SJ506 Transistor

 

2SJ506 Datasheet (PDF)

1.1. rej03g0873 2sj506lsds.pdf Size:102K _renesas

2SJ506
2SJ506

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj506.pdf Size:89K _renesas

2SJ506
2SJ506

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 ? typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS00

 1.3. 2sj506s.pdf Size:1240K _kexin

2SJ506
2SJ506

SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-30V D ● ID =-10 A 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 85mΩ (VGS =-10V) G ● RDS(ON) < 180Ω (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain ■ Absolute Maximum Ratings Ta

Anderen MOSFET... 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , IRLR2905 , 2SJ517 , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , 2SJ531 .

 

 
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