Alle MOSFET. BUZ111SL Datenblatt

 

BUZ111SL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: BUZ111SL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 250 W

Maximale Drain-Source-Spannung (Vds): 55 V

Maximale Gate-Source-Spannung (Vgs): 14 V

Maximaler Drainstrom (Id): 80 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Gate-Ladung (Qg): 155 nC

Anstiegszeit (tr): 37 nS

Drain-Kapazität (Cd): 1090 pF

Ausgangswiderstand RDS(on): 0.007 Ohm

Transistorgehäuse: TO-220AB

Ersatz (vergleichstyp) für BUZ111SL Transistor

 

BUZ111SL Datasheet (PDF)

1.1. buz111sl.pdf Size:77K _update_mosfet

BUZ111SL
BUZ111SL

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

1.2. buz111sl.pdf Size:101K _infineon

BUZ111SL
BUZ111SL

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

 3.1. buz111s.pdf Size:112K _update_mosfet

BUZ111SL
BUZ111SL

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

3.2. buz111s.pdf Size:103K _infineon

BUZ111SL
BUZ111SL

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

Anderen MOSFET... BUZ103SL , BUZ104 , BUZ104L , BUZ104S , BUZ10L , BUZ10S2 , BUZ110S , BUZ111S , IRF740 , BUZ11AL , BUZ12 , BUZ12A , BUZ171 , BUZ201 , BUZ202 , BUZ206 , BUZ210 .

 
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