Alle MOSFET. BUZ11AL Datenblatt

 

BUZ11AL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: BUZ11AL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 75 W

Maximale Drain-Source-Spannung (Vds): 50 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 26 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2.5 V

Anstiegszeit (tr): 80 nS

Drain-Kapazität (Cd): 580 pF

Ausgangswiderstand RDS(on): 0.055 Ohm

Transistorgehäuse: TO-220AB

Ersatz (vergleichstyp) für BUZ11AL Transistor

 

BUZ11AL Datasheet (PDF)

1.1. buz11al.pdf Size:332K _update_mosfet

BUZ11AL
BUZ11AL



4.1. buz11a.pdf Size:116K _st

BUZ11AL
BUZ11AL

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V < 0.055 ? 27 A TYPICAL RDS(on) = 0.048 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVE

 5.1. buz111sl.pdf Size:77K _update_mosfet

BUZ11AL
BUZ11AL

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

5.2. buz111s.pdf Size:112K _update_mosfet

BUZ11AL
BUZ11AL

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

 5.3. buz110s.pdf Size:88K _update_mosfet

BUZ11AL
BUZ11AL

BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 Ω TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

5.4. buz11.pdf Size:173K _st

BUZ11AL
BUZ11AL

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V < 0.04 ? 36 A BUZ11FI 50 V < 0.04 ? 21 A TYPICAL RDS(on) = 0.03 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRE

 5.5. buz11s2 buz11s2fi.pdf Size:384K _st2

BUZ11AL
BUZ11AL

5.6. buz11.pdf Size:81K _fairchild_semi

BUZ11AL
BUZ11AL

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040? (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speed

5.7. buz110sl.pdf Size:104K _infineon

BUZ11AL
BUZ11AL

BUZ 110SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube

5.8. buz111sl.pdf Size:101K _infineon

BUZ11AL
BUZ11AL

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

5.9. buz111s.pdf Size:103K _infineon

BUZ11AL
BUZ11AL

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

5.10. buz110s.pdf Size:126K _infineon

BUZ11AL
BUZ11AL

BUZ 110S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A

Anderen MOSFET... BUZ104 , BUZ104L , BUZ104S , BUZ10L , BUZ10S2 , BUZ110S , BUZ111S , BUZ111SL , IRF540 , BUZ12 , BUZ12A , BUZ171 , BUZ201 , BUZ202 , BUZ206 , BUZ210 , BUZ215 .

 
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