Alle MOSFET. CHM02N6GPAGP Datenblatt

 

CHM02N6GPAGP MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: CHM02N6GPAGP

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 48 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 1.9 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 6.7 nC

Anstiegszeit (tr): 11 nS

Ausgangswiderstand RDS(on): 5.5 Ohm

Transistorgehäuse: DPAK

Ersatz (vergleichstyp) für CHM02N6GPAGP Transistor

 

CHM02N6GPAGP Datasheet (PDF)

1.1. chm02n6gpagp.pdf Size:86K _update_mosfet

CHM02N6GPAGP
CHM02N6GPAGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6GPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High pow

3.1. chm02n6pagp.pdf Size:97K _update_mosfet

CHM02N6GPAGP
CHM02N6GPAGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

3.2. chm02n6angp.pdf Size:107K _update_mosfet

CHM02N6GPAGP
CHM02N6GPAGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6ANGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 1.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160

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