Alle MOSFET. CHM0410JGP Datenblatt

 

CHM0410JGP MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: CHM0410JGP

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2.5 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 3.4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 12 nC

Anstiegszeit (tr): 3 nS

Drain-Kapazität (Cd): 100 pF

Ausgangswiderstand RDS(on): 0.12 Ohm

Transistorgehäuse: SO-8

Ersatz (vergleichstyp) für CHM0410JGP Transistor

 

CHM0410JGP Datasheet (PDF)

1.1. chm0410jgp.pdf Size:73K _update_mosfet

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM0410JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 3.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

5.1. chm04n6ngp.pdf Size:107K _update_mosfet

CHM0410JGP
CHM0410JGP

CHENMKO ENTERPRISE CO.,LTD CHM04N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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