Alle MOSFET. CHM05N65PAGP Datenblatt

 

CHM05N65PAGP MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: CHM05N65PAGP

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 56 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 10 nC

Anstiegszeit (tr): 12 nS

Drain-Kapazität (Cd): 90 pF

Ausgangswiderstand RDS(on): 2.4 Ohm

Transistorgehäuse: DPAK

Ersatz (vergleichstyp) für CHM05N65PAGP Transistor

 

 

CHM05N65PAGP Datasheet (PDF)

1.1. chm05n65pagp.pdf Size:336K _update_mosfet

CHM05N65PAGP
CHM05N65PAGP

CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. D-PAK(TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capabilit

5.1. chm05p03ngp.pdf Size:92K _update_mosfet

CHM05N65PAGP
CHM05N65PAGP

CHENMKO ENTERPRISE CO.,LTD CHM05P03NGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(

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