Alle MOSFET. CHM09N7NGP Datenblatt

 

CHM09N7NGP MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: CHM09N7NGP

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 167 W

Maximale Drain-Source-Spannung (Vds): 700 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 8 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 32 nC

Anstiegszeit (tr): 7 nS

Ausgangswiderstand RDS(on): 1.2 Ohm

Transistorgehäuse: D2PAK

Ersatz (vergleichstyp) für CHM09N7NGP Transistor

 

CHM09N7NGP Datasheet (PDF)

1.1. chm09n7ngp.pdf Size:107K _update_mosfet

CHM09N7NGP
CHM09N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

4.1. chm09n6ngp.pdf Size:343K _update_mosfet

CHM09N7NGP
CHM09N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 

Anderen MOSFET... CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , CHM05N65PAGP , CHM05P03NGP , CHM06N5NGP , CHM09N6NGP , BS170 , CHM1012LPAGP , CHM1012PAGP , CHM1012TGP , CHM1013TGP , CHM1023VGP , CHM1024VGP , CHM10N4NGP , CHM11C2JGP .

 
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