Alle MOSFET. PHB3N50E Datenblatt

 

PHB3N50E MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PHB3N50E

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 83 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximaler Drainstrom (Id): 3.4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 3 Ohm

Transistorgehäuse: SOT404

Ersatz (vergleichstyp) für PHB3N50E Transistor

 

PHB3N50E Datasheet (PDF)

1.1. php3n50e phb3n50e.pdf Size:78K _philips2

PHB3N50E
PHB3N50E

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 3.4 A g • Low thermal resistance RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhan

5.1. php3n40e phb3n40e phd3n40e.pdf Size:103K _philips2

PHB3N50E
PHB3N50E

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 400 V • Stable off-state characteristics • High thermal cycling performance ID = 2.5 A g • Low thermal resistance RDS(ON) ≤ 3.5 Ω s GENERAL DESCRIPTION N-ch

5.2. php3n60e phb3n60e.pdf Size:79K _philips2

PHB3N50E
PHB3N50E

Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 2.8 A g • Low thermal resistance RDS(ON) ≤ 4.4 Ω s GENERAL DESCRIPTION N-channel, enh

Anderen MOSFET... PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , STF5N52U , PHB3N60E , PHB42N03LT , PHB44N06LT , PHB45N03LT , PHB4N60E , PHB50N03LT , PHB50N06LT , PHB55N03LT .

 


PHB3N50E
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