Alle MOSFET. NVF3055L108 Datenblatt

 

NVF3055L108 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: NVF3055L108

Markierungscode: 3055L

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2.1 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 15 V

Maximaler Drainstrom (Id): 3 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Gate-Ladung (Qg): 7.6 nC

Anstiegszeit (tr): 35 nS

Drain-Kapazität (Cd): 112 pF

Ausgangswiderstand RDS(on): 0.12 Ohm

Transistorgehäuse: SOT-223

Ersatz (vergleichstyp) für NVF3055L108 Transistor

 

 

NVF3055L108 Datasheet (PDF)

1.1. nvf3055l108.pdf Size:69K _update_mosfet

NVF3055L108
NVF3055L108

NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 Designed for low voltage, high speed switching applications in power http://onsemi.com supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V Features RDS(on) = 120 mW • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

3.1. nvf3055-100.pdf Size:103K _update_mosfet

NVF3055L108
NVF3055L108

NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features N-Channel • AEC-Q101 Qualified and PPAP Capable - NVF3055-100 D • These Devices are Pb-Free and are RoHS Compli

 

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

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