Alle MOSFET. NVF6P02 Datenblatt

 

NVF6P02 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: NVF6P02

Markierungscode: 6P02

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 8.3 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 8 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 1 V

Gate-Ladung (Qg): 15 nC

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 350 pF

Ausgangswiderstand RDS(on): 0.05 Ohm

Transistorgehäuse: SOT-223

Ersatz (vergleichstyp) für NVF6P02 Transistor

 

 

NVF6P02 Datasheet (PDF)

1.1. nvf6p02.pdf Size:102K _update_mosfet

NVF6P02
NVF6P02

NTF6P02, NVF6P02 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http://onsemi.com Features • Low RDS(on) -10 AMPERES • Logic Level Gate Drive -20 VOLTS • Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) • Avalanche Energy Specified • NVF Prefix for Automotive and Other Applications Requiring S Unique Site and Control Change Requirements; AEC-Q101 Qua

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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