Alle MOSFET. NVGS4111P Datenblatt

 

NVGS4111P MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: NVGS4111P

Markierungscode: VTG

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 1.25 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 3.7 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 3 V

Gate-Ladung (Qg): 15.25 nC

Anstiegszeit (tr): 15 nS

Drain-Kapazität (Cd): 140 pF

Ausgangswiderstand RDS(on): 0.06 Ohm

Transistorgehäuse: SC-88

Ersatz (vergleichstyp) für NVGS4111P Transistor

 

 

NVGS4111P Datasheet (PDF)

1.1. nvgs4111p.pdf Size:113K _update_mosfet

NVGS4111P
NVGS4111P

NTGS4111P, NVGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features • Leading -30 V Trench Process for Low RDS(on) • Low Profile Package Suitable for Portable Applications http://onsemi.com • Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX • Improved Efficiency for Battery Applications • NV Prefix for Automotive and Other Applications

4.1. nvgs4141n.pdf Size:113K _update_mosfet

NVGS4111P
NVGS4111P

NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6 Features • Low RDS(on) • Low Gate Charge • NV Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) TYP ID MAX • Pb-Free Package is Available 21.5 mW @ 10 V Applications 30 V 7.0 A 30 mW

 

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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