Alle MOSFET. NVGS5120P Datenblatt

 

NVGS5120P MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: NVGS5120P

Markierungscode: VP6

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 1.1 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 2.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 3 V

Gate-Ladung (Qg): 18.1 nC

Anstiegszeit (tr): 4.9 nS

Drain-Kapazität (Cd): 72 pF

Ausgangswiderstand RDS(on): 0.111 Ohm

Transistorgehäuse: TSOP-6

Ersatz (vergleichstyp) für NVGS5120P Transistor

 

 

NVGS5120P Datasheet (PDF)

1.1. nvgs5120p.pdf Size:108K _update_mosfet

NVGS5120P
NVGS5120P

NTGS5120P, NVGS5120P Power MOSFET -60 V, -2.9 A, Single P-Channel, TSOP-6 Features • 60 V BVds, Low RDS(on) in TSOP-6 Package • 4.5 V Gate Rating http://onsemi.com • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX • This is a Pb-Free Device 111 mW @ -10 V -

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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