Alle MOSFET. PH1730AL Datenblatt

 

PH1730AL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH1730AL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 109 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 100 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2.15 V

Gate-Ladung (Qg): 77.9 nC

Anstiegszeit (tr): 72 nS

Drain-Kapazität (Cd): 1082 pF

Ausgangswiderstand RDS(on): 0.0017 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH1730AL Transistor

 

 

PH1730AL Datasheet (PDF)

1.1. ph1730al.pdf Size:240K _update_mosfet

PH1730AL
PH1730AL

PH1730AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

1.2. ph1730al.pdf Size:240K _philips

PH1730AL
PH1730AL

PH1730AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to l

 

Anderen MOSFET... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

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