Alle MOSFET. PH1825AL Datenblatt

 

PH1825AL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH1825AL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 104 W

Maximale Drain-Source-Spannung (Vds): 25 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 100 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2.15 V

Gate-Ladung (Qg): 31 nC

Anstiegszeit (tr): 72 nS

Drain-Kapazität (Cd): 1100 pF

Ausgangswiderstand RDS(on): 0.0018 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH1825AL Transistor

 

PH1825AL Datasheet (PDF)

1.1. ph1825al.pdf Size:205K _update_mosfet

PH1825AL
PH1825AL

PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and

1.2. ph1825al.pdf Size:205K _philips

PH1825AL
PH1825AL

PH1825AL N-channel TrenchMOS logic level FET Rev. 01 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and bene

 

Anderen MOSFET... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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