Alle MOSFET. PH1955L Datenblatt

 

PH1955L MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH1955L

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 75 W

Maximale Drain-Source-Spannung (Vds): 55 V

Maximale Gate-Source-Spannung (Vgs): 15 V

Maximaler Drainstrom (Id): 40 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2 V

Gate-Ladung (Qg): 18 nC

Anstiegszeit (tr): 180 nS

Drain-Kapazität (Cd): 217 pF

Ausgangswiderstand RDS(on): 0.0173 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH1955L Transistor

 

PH1955L Datasheet (PDF)

1.1. ph1955l.pdf Size:159K _update_mosfet

PH1955L
PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 — 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a

1.2. ph1955l.pdf Size:159K _philips

PH1955L
PH1955L

PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and be

 

Anderen MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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