Alle MOSFET. PH2525L Datenblatt

 

PH2525L MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH2525L

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 62.5 W

Maximale Drain-Source-Spannung (Vds): 25 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 100 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 2.15 V

Gate-Ladung (Qg): 34.7 nC

Anstiegszeit (tr): 92 nS

Drain-Kapazität (Cd): 1070 pF

Ausgangswiderstand RDS(on): 0.0025 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH2525L Transistor

 

PH2525L Datasheet (PDF)

1.1. ph2525l.pdf Size:97K _update_mosfet

PH2525L
PH2525L

PH2525L N-channel TrenchMOS logic level FET Rev. 02 — 5 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Lead-free package Optimized for use in DC-to-DC Very low switching and conduction converters losse

5.1. ph2520u.pdf Size:196K _philips

PH2525L
PH2525L

PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an

Anderen MOSFET... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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