Alle MOSFET. PH2530AL Datenblatt

 

PH2530AL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH2530AL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 88 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 100 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 2.15 V

Gate-Ladung (Qg): 27 nC

Anstiegszeit (tr): 62 nS

Drain-Kapazität (Cd): 710 pF

Ausgangswiderstand RDS(on): 0.0024 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH2530AL Transistor

 

 

PH2530AL Datasheet (PDF)

1.1. ph2530al.pdf Size:230K _update_mosfet

PH2530AL
PH2530AL

PH2530AL N-channel TrenchMOS logic level FET Rev. 05 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

1.2. ph2530al.pdf Size:230K _philips

PH2530AL
PH2530AL

PH2530AL N-channel TrenchMOS logic level FET Rev. 05 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to l

 

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