Alle MOSFET. PH3230S Datenblatt

 

PH3230S MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PH3230S

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 62.5 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 100 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 3 V

Gate-Ladung (Qg): 42 nC

Anstiegszeit (tr): 37 nS

Drain-Kapazität (Cd): 1150 pF

Ausgangswiderstand RDS(on): 0.0032 Ohm

Transistorgehäuse: LFPAK

Ersatz (vergleichstyp) für PH3230S Transistor

 

 

PH3230S Datasheet (PDF)

1.1. ph3230s.pdf Size:361K _update_mosfet

PH3230S
PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2. ph3230s.pdf Size:361K _philips

PH3230S
PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 

Anderen MOSFET... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

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